Masahiro Ishigami

Masahiro Ishigami, Ph.D.
Assistant Professor
Phone: 407-823-1155
Office: MAP 420
E-mail: ishigami@physics.ucf.edu
Lab web page


  • Postdoc — University of Maryland, College Park, 2004-2007
  • Ph.D. — University of California, Berkeley, 2004
  • B.S. — Massachusetts Institute of Technology, 1997
  • Research

    Electronic transport measurements on novel nanoscale materials, scanning tunneling microscopy and spectroscopy of nanoscale thermal/mechanical/electronic devices, and nanomaterials synthesis

    Selected Publications

    M. Ishigami, J. Cumings, A. Zettl, A. Chen, A Simple Method for the Continuous Production of Carbon Nanotubes, Chemical Physics Letters 319, 457 (2000).

    P. G. Collins, K. Bradley, M. Ishigami, A. Zettl, Extreme Oxygen Sensitivity of Electronic Properties of Carbon Nanotubes, Science 287, 1801 (2000).

    M. Ishigami, Hyoung Joon Choi, Shaul Aloni, S.G. Louie, and M.L. Cohen, Identifying Defects in Nanoscale Materials, Physical Review Letters, 93, 196803 (2004)

    M. Ishigami, Jay Deep Sau, S. Aloni, M.L. Cohen, and A. Zettl, Observation of the Giant Stark Effect in Boron Nitride Nanotubes, Physical Review Letters, 94, 056804 (2005).

    M. Ishigami, J.H. Chen, E.D. Williams, D. Tobias, Y.F. Chen, M.S. Fuhrer, Hooge's Constant for Carbon Nanotube Field Effect Transistor, Applied Physics Letters 88, 203116 (2006).

    M. Ishigami, Jay Deep Sau, S. Aloni, M.L. Cohen, and A. Zettl, Symmetry Breaking in Boron Nitride Nanotubes, Physical Review Letters, 97, 176804 (2006).

    G. Esen, M. Ishigami, E.D. Williams, and M.S. Fuhrer, Transmission Line Impedance of Carbon Nanotube Thin Films for Chemical Sensing, Applied Physics Letters, Applied Physics Letters 90, 123510 (2007).

    M. Ishigami, J.H. Chen, W.G. Cullen, M.S. Fuhrer, and E.D. Williams, Atomic Structure of Graphene on SiO2, Nano Letters 7, 1643 (2007).

    J.H. Chen, M. Ishigami, M.S. Fuhrer, and E.D. Williams, Printed Graphene Circuits, Advanced Materials, 19, 3623(2007).

    D. Tobias, M. Ishigami, E.D. Williams, C.J. Lobb, and M.S. Fuhrer, Origins of 1/f noise in individual semiconducting carbon nanotube field effect transistors, Physical Review B, 77, 033407 (2008).

    J.H. Chen, C. Jang, E.D. Williams, M.S. Fuhrer and M. Ishigami, Charged Impurity Scattering in Graphene, submitted, http://xxx.lanl.gov/abs/0708.2408 (2007).

    J.H. Chen, C. Jang, S. Xiao, M. Ishigami, and M.S. Fuhrer, Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2, submitted, http://xxx.lanl.gov/abs/0711.3646 (2007).

    UCF NanoScience Technology Center | Research Pavilion 4th Floor | TEL: 407-882-1578 FAX: 407-882-2819 | 12424 Research Parkway Suite 400 Orlando, FL 32826 | nano@ucf.edu
    Advanced Materials Processing and Analysis Center