Electronics in Flatland: Novel Analog, Logic and Memory Devices in 2D Materials

Advances in 2D materials such as transition metal dichalcogenides (TMDs) and graphene have enabled a host of advanced device concepts. We will discuss analog RF circuits that can be made in mechanically flexible TMD circuits which can be used for the Internet of Things (IoT). We will also describe beyond-CMOS ideas such as tunnel FETs that can be used in novel logic and memory circuits that are enabled by the unique properties of graphene and TMDs.

Biography:

Sanjay Banerjee is the Cockrell Family Regents Chair Professor of Electrical and Computer Engineering and Director, Microelectronics Research Center, at the University of Texas at Austin. He received his B.Tech from the Indian Institute of Technology and his M.S. and Ph.D. from the University of Illinois at Urbana-Champaign in 1979, 1981 and 1983 respectively, all in electrical engineering. He worked at TI from 1983-87 on the world’s first 4Megabit DRAM. He has been Assistant Professor (1987-90), Associate Professor (1990-93), and Professor (1993-) at the University of Texas at Austin. He has over 580 archival refereed publications/talks, 7 books/chapters, and 26 U.S. patents. He has supervised over 40 Ph.D. and 50 MS students. He received the Engineering Foundation Advisory Council Halliburton Award (1991), the Texas Atomic Energy Fellowship (1990-1997), Cullen Professorship (1997-2001) and the NSF Presidential Young Investigator Award in 1988. His recent awards include the Industrial R&D 100 Award (with Singh in 2004), Distinguished Alumnus Award, IIT (2005), the Hocott Research Award from UT Austin (2007), and the IEEE Grove Award (2014). He is a Fellow of IEEE, APS and AAAS. He is interested in graphene nanoelectronics, spintronics, heterostructure MOSFETs, non-volatile memories, solar cells and device modeling.